smd type ic www.kexin.com.cn 1 smd type ic dual p-channel 1.8-v (g-s) mosfet KI5935DC features trenchfet power mosfets low r ds(on) dual and excellent power handling in a compact footprint absolute maximum ratings ta = 25 symbol 5 secs steady state unit v ds v gs t a =25 -4.1 -3.0 t a =85 -2.9 -2.2 i dm i s -1.8 -0.9 t a =25 2.1 1.1 t a =85 1.1 0.6 t j ,t stg symbol typ max unit t 5sec 50 60 steady-state 90 110 maximum junction-to-foot (drain) steady-state r thjf 30 40 * surface mounted on 1" x 1' fr4 board. parameter r thja /w a p d i d maximum junction-to-ambienta soldering recommendations (peak temperature) 260 v -55to150 parameter w -20 8 -15 drain-source voltage gate-source voltage operating junction and storage temperature range pulsed drain current continuous source current * continuous drain current (t j = 150 )* maximum power dissipation *
www.kexin.com.cn 2 smd type ic smd type ic electrical characteristics ta = 25 parameter symbol testconditons min typ max unit gate threshold voltage v gs(th) v ds =v gs ,i d = -250 a -0.4 1.0 v gate-body leakage i gss v ds =0v,v gs = 8v 100 na v ds = -16v, v gs =0v -1 a v ds = -16v, v gs =0v,t j =85 -5 a on-state drain current* i d(on) v ds -5v,v gs =-4.5v -15 a v gs =-4.5v,i d = -3a 0.069 0.086 v gs =-2.5v,i d = -2.5a 0.097 0.121 v gs =-1.8v,i d = -0.6a 0.137 0.171 forward transconductance* g fs v ds =-10v,i d =-3a 8 s schottky diode forward voltage* v sd i s =-0.9a,v gs = 0 v -0.8 -1.2 v total gate charge q g 5.5 8.5 nc gate-source charge q gs v ds = -10v, v gs =-4.5v,i d = -3 a 0.91 nc gate-drain charge q gd 1.6 nc turn-on delay time t d(on) 18 30 ns rise time t r v dd =-10v,r l =10 32 50 ns turn-off delay time t d(off) i d =-1a,v gen = -4.5v, r g =6 42 65 ns fall time t f 26 40 ns source-drain reverse recovery time t rr i f = -0.9 a, di/dt = 100 a/ s 30 60 ns * pulse test; pulse width 300 s, duty cycle 2%. i dss zero gate voltage drain current r ds(on) drain-source on-state resistance* KI5935DC
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